Microelectronics

Patterning at the Resolution Limit of Commercial Electron Beam Lithography

Mohammad S.M. Saifullah et al.

Nano Letters 22, 7432−7440 (2022)

Controlling the Wet-Etch Directionality in Nanostructured Silicon

Zainul Aabdin et al.

ACS Applied Electronic Materials 4, 5191−5198 (2022)

Strain-induced van der Waals gaps in GeTe revealed by in situ nanobeam diffraction

Yong Yu et al.

Science Advances 8, eadd7690 (2022)

Tunable quantum gaps to decouple carrier and phonon transport leading to high-performance thermoelectrics

Yong Yu et al.

Nature Communications 13, 5612 (2022)

Molecular Bridges Link Monolayers of Hexagonal Boron Nitride during Dielectric Breakdown

Alok Ranjan et al.

ACS Applied Electronic Materials 5, 1262−1276 (2023)

Publications

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

Yesheng Li, Leyi Loh, Sifan Li, Li Chen, Bochang Li, Michel Bosman, Kah-Wee Ang

Nature Electronics 4, 348 (2021)

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots

Jing-Yang Chung, Zhang Li, Sarah A Goodman, Jinkyu So, Govindo J Syaranamual, Tara P Mishra, Eugene A Fitzgerald, Michel Bosman, Kenneth Lee, Stephen J Pennycook, Silvija Gradečak

ACS Photonics 8 (10) 2853 (2021)

The Nature of Column Boundaries in Microstructured Silicon Oxide Nanolayers

Kamal Patel, Jonathon Cottom, Adnan Mehonic, Wing Ng, Anthony J. Kenyon, Michel Bosman, Alexander L. Shluger

APL Materials 9, 121107 (2021)

Gate-Defined Quantum Confinement in CVD 2D WS2

Chit Siong Lau et al.

Advanced Materials 34 (25), 2270189 (2022)

Unlocking the origin of compositional fluctuations in InGaN light emitting diodes

Tara P Mishra, Govindo J Syaranamual, Zeyu Deng, Jing Yang Chung, Li Zhang, Sarah A Goodman, Lewys Jones, Michel Bosman, Silvija Gradečak, Stephen J Pennycook, Pieremanuele Canepa.

Physical Review Materials 5 (2), 024605 (2021)

Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride

Alok Ranjan, Sean J O’Shea, Michel Bosman, Nagarajan Raghavan, Kin Leong Pey

ACS Applied Materials & Interfaces 12 (49), 55000-55010 (2020)

3D characterization of hard breakdown in RRAM device

S Mei, M Bosman, K Shubhakar, N Raghavan, L Ming, KL Pey

Microelectronic Engineering 216, 111042 (2019)

An oxygen vacancy mediated Ag reduction and nucleation mechanism in SiO2 RRAM devices

K Patel, J Cottom, Michel Bosman, AJ Kenyon, AL Shluger