Microelectronics

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

Yesheng Li, Leyi Loh, Sifan Li, Li Chen, Bochang Li, Michel Bosman, Kah-Wee Ang

Nature Electronics 4, 348 (2021)

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots

Jing-Yang Chung, Zhang Li, Sarah A Goodman, Jinkyu So, Govindo J Syaranamual, Tara P Mishra, Eugene A Fitzgerald, Michel Bosman, Kenneth Lee, Stephen J Pennycook, Silvija Gradečak

ACS Photonics 8 (10) 2853 (2021)

The Nature of Column Boundaries in Microstructured Silicon Oxide Nanolayers

Kamal Patel, Jonathon Cottom, Adnan Mehonic, Wing Ng, Anthony J. Kenyon, Michel Bosman, Alexander L. Shluger

APL Materials 9, 121107 (2021)

Gate-Defined Quantum Confinement in CVD 2D WS2

Chit Siong Lau et al.

Advanced Materials 34 (25), 2270189 (2022)

Unlocking the origin of compositional fluctuations in InGaN light emitting diodes

Tara P Mishra, Govindo J Syaranamual, Zeyu Deng, Jing Yang Chung, Li Zhang, Sarah A Goodman, Lewys Jones, Michel Bosman, Silvija Gradečak, Stephen J Pennycook, Pieremanuele Canepa.

Physical Review Materials 5 (2), 024605 (2021)

Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride

Alok Ranjan, Sean J O’Shea, Michel Bosman, Nagarajan Raghavan, Kin Leong Pey

ACS Applied Materials & Interfaces 12 (49), 55000-55010 (2020)

3D characterization of hard breakdown in RRAM device

S Mei, M Bosman, K Shubhakar, N Raghavan, L Ming, KL Pey

Microelectronic Engineering 216, 111042 (2019)

An oxygen vacancy mediated Ag reduction and nucleation mechanism in SiO2 RRAM devices

K Patel, J Cottom, Michel Bosman, AJ Kenyon, AL Shluger

Microelectronic Engineering 216, 111042 (2019)

Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectrics

A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, K Shubhakar, P Pavan, M Bosman, XX Zhang, SJ O’Shea, KL Pey

IEEE Electron Device Letters 40 (8), 1321-1324 (2019)

Michel Bosman Research Group

Department of Materials Science and Engineering