Microelectronics

Publications

Germanium-Telluride-Based Thermoelectrics

Yu Yong et al.

Nature Reviews Electrical Engineering 1, 109-123 (2024)

Single-shot, coherent, pop-out 3D metrolog

Deepan Balakrishnan et al.

Communications Physics 6, 321 (2023)

Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures

Jing-Yang Chung et al.

ACS Applied Nano Materials 6, 14019–14028 (2023)

Molecular Bridges Link Monolayers of Hexagonal Boron Nitride during Dielectric Breakdown

Alok Ranjan et al.

ACS Applied Electronic Materials 5, 1262−1276 (2023)

Tunable quantum gaps to decouple carrier and phonon transport leading to high-performance thermoelectrics

Yong Yu et al.

Nature Communications 13, 5612 (2022)

Patterning at the Resolution Limit of Commercial Electron Beam Lithography

Mohammad S.M. Saifullah et al.

Nano Letters 22, 7432−7440 (2022)

Controlling the Wet-Etch Directionality in Nanostructured Silicon

Zainul Aabdin et al.

ACS Applied Electronic Materials 4, 5191−5198 (2022)

Strain-induced van der Waals gaps in GeTe revealed by in situ nanobeam diffraction

Yong Yu et al.

Science Advances 8, eadd7690 (2022)

Gate-Defined Quantum Confinement in CVD 2D WS2

Chit Siong Lau et al.

Advanced Materials 34 (25), 2270189 (2022)

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots

Jing-Yang Chung et al.

ACS Photonics 8 (10) 2853 (2021)

The Nature of Column Boundaries in Microstructured Silicon Oxide Nanolayers

Kamal Pate et al.

APL Materials 9, 121107 (2021)

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

Yesheng Li et al.

Nature Electronics 4, 348 (2021)

Unlocking the origin of compositional fluctuations in InGaN light emitting diodes

Tara P Mishra et al.

Physical Review Materials 5 (2), 024605 (2021)

Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride

Alok Ranjan et al.

ACS Applied Materials & Interfaces 12 (49), 55000-55010 (2020)

3D characterization of hard breakdown in RRAM device

S Mei et al.

Microelectronic Engineering 216, 111042 (2019)

An oxygen vacancy mediated Ag reduction and nucleation mechanism in SiO2 RRAM devices

K Patel et al.