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Michel Bosman Research Group

Department of Materials Science and Engineering

Publications

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Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures

Yiyu Zhang et al.

ACS Nano 17, 7929 (2023)

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An integrated constrained gradient descent (iCGD) protocol to correct scan-positional errors for electron ptychography with high accuracy and precision

Shoucong Ning et al.

Ultramicroscopy 248, 113716 (2023)

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Molecular Bridges Link Monolayers of Hexagonal Boron Nitride during Dielectric Breakdown

Alok Ranjan et al.

ACS Applied Electronic Materials 5, 1262−1276 (2023)

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Defects in WS2 monolayer calculated with a nonlocal functional: any difference from GGA?

Daria Kieczka et al.

Electronic Structure 5, 024001 (2023)

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Collective Magnetic Behavior in Vanadium Telluride Induced by Self-Intercalation

Roger Guzman et al.

ACS Nano 17, 2450−2459 (2023)

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Rational engineering of metal–organic coordination networks into facet-controlled phosphides for overall water splitting

Gamze Yilmaz et al.

EcoMat. 5, e12312 (2023)

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Enhancement in rate performance and high voltage structural stability of P3/O3 Na0.9Fe0.5Mn0.45Ni0.05O2 layered oxide cathode

Aniruddh Ramesh et al.

Journal of Electroanalytical Chemistry 932, 117222 (2023)

2023

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Van der Waals Epitaxial Growth of 2D Layered Room-Temperature Ferromagnetic CrS2

Han Xiao et al.

Advanced Materials Interfaces 9, 2201353 (2022)

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Low Energy Switching of Phase Change Materials Using a 2D Thermal Boundary Layer

Jing Ning et al.

ACS Applied Materials and Interfaces 14, 41225−41234 (2022)

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Tunable quantum gaps to decouple carrier and phonon transport leading to high-performance thermoelectrics

Yong Yu et al.

Nature Communications 13, 5612 (2022)

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Optically Active Chalcogen Vacancies in Monolayer Semiconductors

Zhepeng Zhang et al.

Advanced Optical Materials 10, 2201350 (2022)

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Patterning at the Resolution Limit of Commercial Electron Beam Lithography

Mohammad S.M. Saifullah et al.

Nano Letters 22, 7432−7440 (2022)

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Controlling the Wet-Etch Directionality in Nanostructured Silicon

Zainul Aabdin et al.

ACS Applied Electronic Materials 4, 5191−5198 (2022)

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Accurate and Robust Calibration of the Uniform Affine Transformation Between Scan-Camera Coordinates for Atom-Resolved In-Focus 4D-STEM Dataset

Shoucong Ning et al.

Microscopy and Microanalysis 28 (3), 622 (2022)

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Robust n-type doping of WSe2 enabled by controllable proton irradiation

Haidong Liang et al.

Nano Research (2022)

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Strain-induced van der Waals gaps in GeTe revealed by in situ nanobeam diffraction

Yong Yu et al.

Science Advances 8, eadd7690 (2022)

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Spontaneous Atomic Sites Formation in Wurtzite
CoO Nanorods for Robust CO2 Photoreduction

Jishi Wei et al.

Advanced Functional Materials 32, 2109692 (2022)

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Nanoscale Mapping of Optically Inaccessible Bound-States-in-the-Continuum

Zhaogang Dong et al.

Light: Science & Applications 11:20 (2022)

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Gate-Defined Quantum Confinement in CVD 2D WS2

Chit Siong Lau et al.

Advanced Materials 34 (25), 2270189 (2022)

2022

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A Scheme for Simulating Multi-level Phase Change Photonics Materials

Yunzheng Wang et al.

Computational Materials 7, 183 (2021)

2021

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots

Jing-Yang Chung et al.

ACS Photonics 8 (10) 2853 (2021)

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The Nature of Column Boundaries in Microstructured Silicon Oxide Nanolayers

Kamal Patel et al.

APL Materials 9, 121107 (2021)

Anisotropic Point Defects in Rhenium Diselenide Monolayers

Yong Zhu et al.

iScience 24 (12) 103456 (2021)

Electrostatically Tunable Near-Infrared Plasmonic Resonances in Solution-Processed Atomically Thin NbSe2

Meng Zhao et al.

Advanced Materials 33 (32) 2101950 (2021)

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

Yesheng Li et al.

Nature Electronics 4, 348 (2021)

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Impurity-Induced Emission in Re-Doped WS2 Monolayers

Leyi Loh et al.

Nano Letters 21 (12) 5293 (2021)

Unlocking the origin of compositional fluctuations in InGaN light emitting diodes

Tara P Mishra et al.

Physical Review Materials 5 (2), 024605 (2021)

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Controlling phase transition in WSe 2 towards ideal n-type transistor

Yue Zheng et al.

Nano Research, 1-8 (2021)

Electron Dynamics in Plasmons

Hue Thi Bich Do et al.

Nanoscale 13, 2801-2810 (2021)

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Coherent Sb/CuTe Core/Shell Nanostructure with Large Strain Contrast Boosting the Thermoelectric Performance of n‐Type PbTe

Shixuan Liu et al.

Advanced Functional Materials 31 (5), 2007340 (2021)

2020

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Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride

Alok Ranjan et al.

ACS Applied Materials & Interfaces 12 (49), 55000-55010 (2020)

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Substitutional doping in 2D transition metal dichalcogenides

Leyi Loh et al.

Nano Research, 1-14 (2020)

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Heterophase fcc-2H-fcc gold nanorods

Zhanxi Fan et al.

Nature communications 11 (1), 1-8 (2020)

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Plasmon-enhanced resonant photoemission using atomically thick dielectric coatings

Xiao Xiong et al.

ACS nano 14 (7), 8806-8815 (2020)

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Particle simulation of plasmons

Wen Jun Ding et al.

Nanophotonics 9 (10) , 3303-3313 (2020)

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Sustainable Fuel Production from Ambient Moisture via Ferroelectrically Driven MoS2 Nanosheets

Lin Yang et al.

Advanced Materials 32 (25), 2000971 (2020)

2019

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Giant Photoinduced Chirality in Thin Film Ge2Sb2Te5

Janaki Shanmugam et al.

Physica status solidi (RRL)–Rapid Research Letters 13 (12), 1900449 (2019)

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Dual phases of crystalline and electronic structures in the nanocrystalline perovskite CsPbBr 3

TJ Whitcher et al.

NPG Asia Materials 11 (1), 1-12 (2019)

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Ultrasmall Designed Plasmon Resonators by Fused Colloidal Nanopatterning

Mohamed Asbahi et al.

ACS applied materials & interfaces 11 (48), 45207-45213 (2019)

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Growth of Nb-Doped Monolayer WS2 by Liquid-Phase Precursor Mixing

Ziyu Qin et al.

ACS nano 13 (9), 10768-10775 (2019)

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Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO2 Interface

Jonathon Cottom et al.

ACS applied materials & interfaces 11 (39), 36232-36243 (2019)

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3D characterization of hard breakdown in RRAM device

S Mei et al.

Microelectronic Engineering 216, 111042 (2019)

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An oxygen vacancy mediated Ag reduction and nucleation mechanism in SiO2 RRAM devices

K Patel et al.

Microelectronic Engineering 216, 111042 (2019)

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Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectrics

A Ranjan et al.

IEEE Electron Device Letters 40 (8), 1321-1324 (2019)

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